SDRAM space radiation effects measurements and analysis

Abstract

In recent years, memory technology has been advancing quickly. This paper presents the comprehensive radiation effects examination of two high density (64 Mb and 128 Mb) 0.35 /spl mu/m CMOS Synchronous Dynamic Random Access Memories (SDRAMs). This study uses the major components of the natural near earth environment to determine the applicability of these parts to space missions. Protons have been used to measure the single event effect (SEE) and total dose sensitivity of these devices. Heavy ions were used to measure the SEE, including single event latch-up (SEL), sensitivity of these devices. Comparisons are made between results from semi-empirical modeling and results from data.