K. Aripov, D. Yodgorova, A. Karimov, S. Yuldashev, B. Nurmukhamedov
{"title":"The Semi-Conductor Optical Switch on a Base of Field Transistor","authors":"K. Aripov, D. Yodgorova, A. Karimov, S. Yuldashev, B. Nurmukhamedov","doi":"10.1109/CANET.2006.279274","DOIUrl":null,"url":null,"abstract":"In the present work the results of research of some opportunities of the field phototransistor as optical switch are resulted. The field phototransistor, used for this purpose, represents arsenide gallium structure of flat design with the bottom manager p-n-junction in quality gate. The mode of operations of the device with switching from one status in another requires a choice working load straight line so that it crossed the target characteristic of the field phototransistor constructed on measurements of the voltage-current characteristics at two various illuminations at least, in two points appropriate to steady statuses.","PeriodicalId":382941,"journal":{"name":"2006 2nd IEEE/IFIP International Conference in Central Asia on Internet","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 2nd IEEE/IFIP International Conference in Central Asia on Internet","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CANET.2006.279274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In the present work the results of research of some opportunities of the field phototransistor as optical switch are resulted. The field phototransistor, used for this purpose, represents arsenide gallium structure of flat design with the bottom manager p-n-junction in quality gate. The mode of operations of the device with switching from one status in another requires a choice working load straight line so that it crossed the target characteristic of the field phototransistor constructed on measurements of the voltage-current characteristics at two various illuminations at least, in two points appropriate to steady statuses.