The Semi-Conductor Optical Switch on a Base of Field Transistor

K. Aripov, D. Yodgorova, A. Karimov, S. Yuldashev, B. Nurmukhamedov
{"title":"The Semi-Conductor Optical Switch on a Base of Field Transistor","authors":"K. Aripov, D. Yodgorova, A. Karimov, S. Yuldashev, B. Nurmukhamedov","doi":"10.1109/CANET.2006.279274","DOIUrl":null,"url":null,"abstract":"In the present work the results of research of some opportunities of the field phototransistor as optical switch are resulted. The field phototransistor, used for this purpose, represents arsenide gallium structure of flat design with the bottom manager p-n-junction in quality gate. The mode of operations of the device with switching from one status in another requires a choice working load straight line so that it crossed the target characteristic of the field phototransistor constructed on measurements of the voltage-current characteristics at two various illuminations at least, in two points appropriate to steady statuses.","PeriodicalId":382941,"journal":{"name":"2006 2nd IEEE/IFIP International Conference in Central Asia on Internet","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 2nd IEEE/IFIP International Conference in Central Asia on Internet","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CANET.2006.279274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In the present work the results of research of some opportunities of the field phototransistor as optical switch are resulted. The field phototransistor, used for this purpose, represents arsenide gallium structure of flat design with the bottom manager p-n-junction in quality gate. The mode of operations of the device with switching from one status in another requires a choice working load straight line so that it crossed the target characteristic of the field phototransistor constructed on measurements of the voltage-current characteristics at two various illuminations at least, in two points appropriate to steady statuses.
基于场晶体管的半导体光开关
本文给出了场光晶体管作为光开关的一些可能性的研究结果。用于此目的的场光电晶体管为平面设计的砷化镓结构,在质量栅极中具有底部管理器p-n结。从一种状态切换到另一种状态的器件的工作模式需要选择一条工作负载直线,使其穿过场光电晶体管的目标特性,该特性是基于至少在两种不同照明下,在适合稳定状态的两点上测量电压-电流特性而构建的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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