Self-timed refreshing approach for dynamic memories

J. Nyathi, J. Delgado-Frías
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引用次数: 5

Abstract

Refreshing dynamic circuits must be carried out before stored voltages reach unacceptable levels. In this paper we present CMOS circuitry that can be used to sense the integrity of stored data, provide timely refreshing to these dynamic circuits and provide high performance. Differential amplifiers are used to provide the difference between a degrading stored voltage and a reference voltage. This difference gets converted to a single-ended output which serves as the refresh trigger. Memory arrays are used as test beds to verify the functionality and effectiveness of these circuits. The circuits considered in this paper are suitable for use in high speed, low power and high density memory arrays.
动态记忆的自定时刷新方法
在存储电压达到不可接受的水平之前,必须对动态电路进行刷新。在本文中,我们提出了一种CMOS电路,可以用来感知存储数据的完整性,为这些动态电路提供及时的刷新,并提供高性能。差分放大器用于提供退化的存储电压和参考电压之间的差值。这一差异被转换为作为刷新触发器的单端输出。存储器阵列被用作测试平台来验证这些电路的功能和有效性。本文所考虑的电路适用于高速、低功耗和高密度存储器阵列。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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