Electrical properties of CVD-graphene FETs

Abstract

Graphene field-effect transistors (GFET) were first presented in 2004, and quickly became an interesting electronics research topic due to the many promises that the material holds. We have fabricated GFETs using an IC-compatible chemical vapour deposition (CVD) process. This paper presents experimental results of graphene field-effect transistors with CVD grown graphene layer. In addition, this paper reviews briefly the state-of-the-art GFETs and device physics.