A novel simulation methodology for development of ESD primitives on a 0.18µm analog, mixed-signal high voltage process technology

F. Roger, J. Cambieri, R. Minixhofer
{"title":"A novel simulation methodology for development of ESD primitives on a 0.18µm analog, mixed-signal high voltage process technology","authors":"F. Roger, J. Cambieri, R. Minixhofer","doi":"10.1109/SISPAD.2011.6035080","DOIUrl":null,"url":null,"abstract":"This paper presents a full simulation methodology dedicated to the ESD primitive devices development in High Voltage technology. This workflow based on layout generation, 2D, 3D and mixed-mode TCAD simulations and SPICE simulations provide robust devices sustaining ESD stress tests.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Simulation of Semiconductor Processes and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2011.6035080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This paper presents a full simulation methodology dedicated to the ESD primitive devices development in High Voltage technology. This workflow based on layout generation, 2D, 3D and mixed-mode TCAD simulations and SPICE simulations provide robust devices sustaining ESD stress tests.
一种新的模拟方法,用于在0.18 μ m模拟,混合信号高压工艺技术上开发ESD原语
本文提出了一种用于高压技术中ESD原始器件开发的完整仿真方法。该工作流程基于布局生成、2D、3D和混合模式TCAD仿真以及SPICE仿真,可提供支持ESD压力测试的稳健设备。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信