Universal Behavioural Model for SiC Power MOSFETs Under Forward Bias

Abstract

In this work, a new behavioural model for SiC MOSFETs under forward bias has been presented. Its novel relationships enable to achieve higher accuracy of characteristics representation over a wide temperature range. In order to prove its universal applicability, it has been validated for different transistors from various manufacturers and the parameter extraction procedure has been described. The results obtained are on par or better than for the original models of the respective transistors, especially in the moderate inversion region and for temperature effects. The developed model is intended to form part of a comprehensive SiC MOSFET model covering forward, reverse and switching behaviour.