Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs

S. Subbanna, L. Larson, G. Freeman, D. Ahlgren, K. Stein, C. Dickey, J. Mecke, A. Rincon, P. Bacon, R. Groves, M. Soyuer, D. Harame, J. Dunn, D. Rowe, W. Chon, D. Herman, B. Meyerson
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引用次数: 4

Abstract

SiGe BiCMOS technology provides a stable, ultra-high performance, semiconductor technology capable of supporting large mixed-signal VLSI circuit designs for a variety of emerging communications applications. This technology has been wedded to a CAD system that supports a variety of high-performance circuit designs, mixed-signal circuit block re-use, and the ability to accurately predict circuit performance at the highest frequencies. This paper will summarize the progress this technology has made in recent years in moving from the research laboratory into a production environment.
2- 40ghz VLSI混合信号集成电路的硅锗BiCMOS技术和CAD环境
SiGe BiCMOS技术提供了一种稳定、超高性能的半导体技术,能够支持各种新兴通信应用的大型混合信号VLSI电路设计。该技术已结合到CAD系统中,该系统支持各种高性能电路设计,混合信号电路块重用,以及在最高频率下准确预测电路性能的能力。本文将总结近年来该技术从研究实验室进入生产环境所取得的进展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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