First-Principle Study of Spin Transport in GaAs-Adenine-GaAs Semi-Conductor Tunnel Junction

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) Pub Date : 2020-07-01 DOI:10.1109/VLSIDCS47293.2020.9179864

D. Dey, Pradipta Roy, Debashis De Smieee

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引用次数: 2

Abstract

The spin transport phenomenon in Adenine based semi-conducting tunnel junction using GaAs semiconductor nano ribbon electrodes has been reported using Density Functional Theory (DFT) and Non Equilibrium Green’s Function (NEGF) based formalisms. First principle approach has been used to simulate and investigate the effects of semiconductor contact tunnelling resistance at low bias voltage. This experiment has been carried out at room temperature. It is observed that Tunnelling Contact Resistance remains high (~100 %) at higher bias voltage. The quantum-ballistic transmission obtained for parallel configuration is large enough comparing with anti parallel configuration of this analytical model representation of the nano structured device. The current-voltage characteristics reflect that the investigated spin current is significantly larger for parallel configuration when compared with the spin current which is acquired for anti-parallel configuration. Perfect quantum-ballistic spintransportation effect is obtained for this GaAsAdenine-GaAs semi-conductor tunnel junction structure.

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gaas -腺嘌呤- gaas半导体隧道结自旋输运的第一性原理研究

利用密度泛函理论(DFT)和非平衡格林函数(NEGF)的形式，报道了GaAs半导体纳米带电极在腺嘌呤基半导体隧道结中的自旋输运现象。采用第一性原理方法模拟和研究了低偏置电压下半导体接触隧穿电阻的影响。这个实验是在室温下进行的。观察到在较高的偏置电压下，隧穿接触电阻仍然很高(~ 100%)。该解析模型表示的纳米结构器件的平行构型与反平行构型相比，得到的量子弹道传输量足够大。电流-电压特性表明，与反并联配置相比，并联配置下的自旋电流明显更大。这种GaAsAdenine-GaAs半导体隧道结结构获得了完美的量子弹道自旋输运效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS)

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