A fully integrated 3-band OFDM UWB transceiver in 0.25/spl mu/m SiGe BiCMOS

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 Pub Date : 2006-06-11 DOI:10.1109/RFIC.2006.1651142

Jozef Reinerus Maria Bergervoet, H. Kundur, D. Leenaerts, R. V. D. Beek, Raf Roovers, G. V. D. Weide, H. Waite, S. Aggarwal

引用次数: 2

Abstract

A fully integrated transceiver for 3-band OFDM UWB is presented. It has been implemented in a 0.25mum SiGe BiCMOS process, and has a die area of less than 4mm2. The power consumption is 47mA, 43mA, and 27mA at 2.7V supply for receiver, transmitter, and synthesizer respectively. The chip features DC offset cancellation, a loop-back test mode, a single input/output pin for antenna connection, a 1GHz baseband clock output and is robust against interferers from cellular and ISM bands. The measured EVM is 8%, while the overall NF is 4.5dB and the iIP3 is -6dBm

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一个完全集成的3波段OFDM UWB收发器在0.25/spl mu/m SiGe BiCMOS

介绍了一种3波段OFDM超宽带全集成收发器。它已在0.25 μ g的BiCMOS工艺中实现，并且模具面积小于4mm2。接收机、发射机和合成器在2.7V供电时的功耗分别为47mA、43mA和27mA。该芯片具有直流偏移抵消、环回测试模式、用于天线连接的单输入/输出引脚、1GHz基带时钟输出，并且对来自蜂窝和ISM频段的干扰具有很强的抗干扰能力。测量到的EVM为8%，而总体NF为4.5dB, iIP3为-6dBm

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006

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