Reliability enhancement of 1Xnm TLC for cold flash and millennium memories

2015 Symposium on VLSI Technology (VLSI Technology) Pub Date : 2015-06-16 DOI:10.1109/VLSIT.2015.7223642

Senju Yamazaki, S. Tanakamaru, Sakuya Suzuki, T. Iwasaki, Shogo Hachiya, K. Takeuchi

引用次数: 3

Abstract

Endurance and retention are measured in 1Xnm Triple Level Cell (TLC) NAND and the flexible nLC scheme (flex-nLC) is proposed to improve reliability. This method enables the use of lowest-cost TLC NAND as is, in long term storage applications such as cold flash and digital archive: millennium memory, which have 20 and 1000 years retention, respectively.

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用于冷闪和千禧年存储器的1Xnm薄层色谱可靠性增强

在1Xnm三层薄层(TLC) NAND中测量了持久度和保持度，并提出了柔性nLC方案(flex-nLC)来提高可靠性。这种方法使最低成本的TLC NAND能够在长期存储应用中使用，例如冷闪和数字存档:千禧年存储器，它们分别具有20年和1000年的保留时间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 Symposium on VLSI Technology (VLSI Technology)

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