LP-HVPE growth of S, Fe and undoped InP

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773650

D. Jahan, D. Soderstrom, S. Lourdudoss

引用次数: 6

Abstract

This study presents the result of low-pressure hydride vapour phase epitaxy of undoped and doped InP carried out in a commercial equipment designed for 3-inch wafers. Specially, InP:Fe growth with ferrocene has been investigated in order to provide high resistive semi-insulating material. Besides, a very good planarisation around mesas has been achieved by selective regrowth. Finally, to validate the equipment, Fabry-Perot lasers with a modulation bandwidth of 15 GHz have been realised by burying mesas with regrown InP:Fe.

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S、Fe和未掺杂InP的LP-HVPE生长

本研究介绍了在3英寸晶圆设计的商用设备上进行的未掺杂和掺杂InP的低压氢化物气相外延的结果。为了提供高阻半绝缘材料，研究了用二茂铁生长InP:Fe的方法。此外，通过选择性再生，在台地周围实现了很好的平面化。最后，为了验证该设备的有效性，利用再生InP:Fe埋置台面实现了调制带宽为15 GHz的Fabry-Perot激光器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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