A reverse-channel, high-voltage lateral IGBT

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583647

T. Chow, D. Pattanayak, B. J. Baliga, M. Adler

引用次数: 20

Abstract

A novel reverse-channel lateral IGBT has been studied with numerical simulations and demonstrated experimentally for the first time. It exhibits a negative differential resistance (NDR) region, which is dependent on the gate voltage and has large peak to valley ratios (10 to >1000), in the I-V characteristics. Also, during dynamic switching, it has been shown to be self-current limiting and hence not to latch up.

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一个反向通道，高压横向IGBT

本文首次对一种新型的反通道横向IGBT进行了数值模拟和实验验证。它表现出负差分电阻(NDR)区域，该区域依赖于栅极电压，在I-V特性中具有较大的峰谷比(10至>1000)。此外，在动态开关过程中，它已被证明是自限流的，因此不会锁存。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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