DEVICE FOR STUDYING TENZE SENSITIVITY IN PHOTOSENSITIVE SEMICONDUCTOR FILMS

SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-02-28 DOI:10.37681/2181-1652-019-x-2021-1-5

Kh. S. Daliev, M. Onarkulov, S. Otajonov

引用次数: 0

Abstract

A device has been developed for studying strain sensitivity in photosensitive wide- gap semiconductor thin films. The device allows the study o f strain sensitivity in photosensitive wide- gap semiconductor thin films when illuminated with natural and monochromatic light within the deformation range from -210-3 to 210-3 rel. At the same time, this device makes it possible to deform the same film repeatedly without destroying it

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研究光敏半导体薄膜张力灵敏度的装置

研制了一种用于研究光敏宽间隙半导体薄膜应变灵敏度的装置。该装置可以研究光敏宽间隙半导体薄膜在自然光和单色光照射下在-210-3 ~ 210-3 rel变形范围内的应变灵敏度。同时，该装置使同一薄膜在不破坏的情况下反复变形成为可能

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS

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