A new single ended sense amplifier for low voltage embedded EEPROM non volatile memories

Proceedings of the 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT2002) Pub Date : 2002-07-10 DOI:10.1109/MTDT.2002.1029776

Caroline Papaix, J. Daga

引用次数: 15

Abstract

A new single ended sense amplifier is presented in this paper. It is based on a very simple direct current-voltage conversion. It has been designed in standard CMOS process for embedded non-volatile memories. Its performances are compared to one of the actually most integrated sense amplifiers, based on differential structures. A 40% faster access time has been obtained at 1.8V.

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一种用于低压嵌入式EEPROM非易失性存储器的新型单端感测放大器

提出了一种新型的单端感测放大器。它是基于一个非常简单的直流电压转换。该芯片采用标准CMOS工艺设计，可用于嵌入式非易失性存储器。将其性能与基于差分结构的集成程度最高的感觉放大器进行了比较。在1.8V下获得了快40%的存取时间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT2002)

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