Thermal metrology of silicon microstructures using Raman spectroscopy

Abstract

The effects of temperature and stress on the Raman shift in single crystal silicon and polycrystalline silicon films were calibrated. Polysilicon films were grown by LPCVD using a range of temperatures to produce amorphous and crystalline materials followed by doping and annealing. The dependencies of the linear coefficients were related to the polysilicon microstructure using AFM surface scans to determine any possible links. Finally, the technique was utilized in measuring the temperature distribution in a thermal MEMS cantilever device with micron spatial resolution.