K. Nakahara, Y. Kawashima, M. Sato, T. Matsunaga, Kousuke Yamamoto, W. M. Nakamura, D. Yamashita, Hidefumi Matsuzaki, G. Uchida, N. Itagaki, K. Koga, M. Shiratani
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Abstract
We have deposited cluster-free B-doped a-Si:H films using a SiH4+B10H14 multi-hollow discharge plasma CVD method. We have studied gas flow rate ratio R=[B10H14]/[SiH4] dependence of deposition rate and absorbance of films together with plasma emission intensities. Deposition rate increases sharply from 0.8nm/s R=0.0 % to 2.2nm/s for R=0.53%, but SiH emission intensity is almost constant for R=0–2.0%. These results suggest BxHy radicals enhance surface reaction probability of SiH3 radicals. The optical bandgap of films is around 1.9eV, being larger than that of conventional B-doped films.
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