Charge storage in Teflon AF films

Tingji Lu
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引用次数: 5

Abstract

The behavior of charge storage in corona charged and electron-beam irradiated Teflon AF films is investigated. Teflon AF film of 2 to 4 /spl mu/m thickness were prepared on glass substrates with Al and graphite electrodes by spin coating. Details of the experimental results are reported and discussed. For example, the measuring result of the laser-induced pressure pulse method shows that the velocity of the pressure pulse is 1.4 km/s. The maximum surface density depends mostly on the dielectric strength of the film, and the maximum potential of the free surface on the sample is directly proportional to the film thickness. The application of heat before, during or after charging can effectively improve the charge stability.
聚四氟乙烯AF薄膜中的电荷存储
研究了电晕带电和电子束辐照聚四氟乙烯AF薄膜的电荷存储行为。采用自旋镀膜的方法在玻璃衬底上制备了厚度为2 ~ 4 μ m /spl μ m的聚四氟乙烯AF膜。对实验结果进行了详细的报道和讨论。例如,激光诱导压力脉冲法的测量结果表明,压力脉冲的速度为1.4 km/s。最大表面密度主要取决于薄膜的介电强度,样品上自由表面的最大电位与薄膜厚度成正比。在充电前、充电中、充电后加热,可有效提高充电稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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