{"title":"Low power 2.5-Gb/s CMOS burst-mode transimpedance amplifier with fast response time using a novel peak detection circuit","authors":"Young-Ho Kim, Eunok Kim, Wonjong Kim","doi":"10.1109/ICECS.2015.7440289","DOIUrl":null,"url":null,"abstract":"A 2.5 Gb/s CMOS burst-mode transimpedance amplifier (BM-TIA) with a novel peak detection circuit is designed in this paper. The proposed peak detection circuit changes quickly the gain mode of the BM-TIA and then improves the data transmission capacity of the PON system with low power consumption. In order to obtain quick response time of the BM-TIA, a RC-LPF, an amplifier followed it and a replica circuit of the amplifier are built in. This BM-TIA was fabricated in 1P6M 0.18 μm CMOS process. The designed IC exhibits a quick response of 11 nsec for a 2.5 Gb/s burst preamble input. In this condition, this chip of 4 channel consumes 195.4 mW from a 1.8 V supply. In high gain mode, the BM-TIA achieves a gain of 66 dBΩ with 2.45 GHz bandwidth and the eye jitter (rms) of 4.243 ps.","PeriodicalId":215448,"journal":{"name":"2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2015.7440289","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A 2.5 Gb/s CMOS burst-mode transimpedance amplifier (BM-TIA) with a novel peak detection circuit is designed in this paper. The proposed peak detection circuit changes quickly the gain mode of the BM-TIA and then improves the data transmission capacity of the PON system with low power consumption. In order to obtain quick response time of the BM-TIA, a RC-LPF, an amplifier followed it and a replica circuit of the amplifier are built in. This BM-TIA was fabricated in 1P6M 0.18 μm CMOS process. The designed IC exhibits a quick response of 11 nsec for a 2.5 Gb/s burst preamble input. In this condition, this chip of 4 channel consumes 195.4 mW from a 1.8 V supply. In high gain mode, the BM-TIA achieves a gain of 66 dBΩ with 2.45 GHz bandwidth and the eye jitter (rms) of 4.243 ps.