Impact of nanometer transistor on analog performance

A. A'Ain, Mohamad Asfa Husaini Bin Zakaria, J. G. Khor, S. Hui
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引用次数: 1

Abstract

There is a serious concern on the time to market the product as transistor size continues to shrink. This is especially true in analog IC design where the impact on new process would require deep understanding of its parameters on design specifications. The nature of analog specifications which oppose each other adds more complexity in the fine tune design process. This paper explores this issue, concentrating on the impact of transistor size scaling on analog design in CMOS technology. Circuit performance - voltage gain, power dissipation, output voltage swing and cut-off frequency are observed throughout this paper to analyze the impact of transistor size scaling. Predictive transistor model (PTM) is used in this project for technology process of 130 nm, 90 nm, 65 nm, 45 nm and 32 nm.
纳米晶体管对模拟性能的影响
随着晶体管尺寸的不断缩小,产品上市的时间是一个严重的问题。在模拟IC设计中尤其如此,其中对新工艺的影响需要深入了解其设计规范上的参数。相互对立的模拟规格的性质增加了微调设计过程中的复杂性。本文探讨了这一问题,重点讨论了晶体管尺寸缩放对CMOS技术中模拟设计的影响。通过观察电路性能——电压增益、功耗、输出电压摆幅和截止频率来分析晶体管尺寸缩放的影响。本项目采用预测晶体管模型(PTM)对130 nm、90 nm、65 nm、45 nm和32 nm的工艺流程进行预测。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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