Wideband Reconfigurable Capacitive shunt-feedback LNA in 65nm CMOS

I. Din, J. Wernehag, S. Andersson, S. Mattisson
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引用次数: 3

Abstract

A differential LNA using capacitive shunt feedback is demonstrated in 65nm CMOS. The capacitive shunt feedback structure gives a wideband input matching, S11 <;-17 dB from 500MHz - 1 GHz for low band and S11 <;-20 dB from 1.1 GHz - 2.3GHz for high band. The NF for the complete receiver chain in low band and high band was measured to 3.3 dB and 3.9 dB, respectively. The 1-dB compression point with a 0dBm blocker present at 20MHz offset is 0dBm and the NFdsb with 0dBm blocker is 13 dB. In-band IIP3, and IIP2 are -14.8 dBm, and >;49 dBm, respectively for low band and -18.2dBm and >;44dBm for high band.
65nm CMOS的宽带可重构电容并联反馈LNA
介绍了一种采用电容分流反馈的差分LNA在65nm CMOS上的应用。电容并联反馈结构提供宽带输入匹配,低频段分别为S11; 49dbm,高频段分别为-18.2dBm和>;44dBm。
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