A highly linear, differential gyrator in 65nm CMOS for reconfigurable GHz applications

Abstract

This work presents the design, implementation and measurement results of a novel, gyrator-based active inductor circuit in a 1.2 V 65nm CMOS technology. By solely employing stacked nMOS-pMOS transistor combinations, the proposed differential gyrator achieves a maximal self-resonance frequency of approximately 18 GHz and features high linearity with a current consumption of only 6 mA, therefore representing an attractive candidate for radio-frequency applications. The proposed active inductor is combined with additional circuitry and switchable capacitors in order to form an inductorless, reconfigurable RF amplifier. The comparison of measurement and simulation data in terms of scattering parameters and output referred compression verifies the active inductor's functionality.