Study of undoped channel FinFETs in active rail clamp ESD networks

M. Khazhinsky, M. Chowdhury, D. Tekleab, L. Mathew, J. Miller
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引用次数: 5

Abstract

In this paper we investigate state-of-the-art undoped channel FinFETs and FinDiodes with an emphasis on I/O and ESD applicability. Utilizing electrical characterization data, 3D TCAD, and a compact model, we demonstrate that FinFETs and FinDiodes exhibit a very appealing combination of high breakdown voltage and low Ioff for I/O and ESD protection circuit applications.
有源轨钳位ESD网络中无掺杂通道finfet的研究
在本文中,我们研究了最先进的无掺杂通道finfet和FinDiodes,重点是I/O和ESD适用性。利用电特性数据、3D TCAD和紧凑的模型,我们证明了finfet和findides在I/O和ESD保护电路应用中具有非常吸引人的高击穿电压和低断开的组合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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