{"title":"Development and application of a new semiconductive glaze insulator","authors":"O. Nigol, E. Cherney","doi":"10.1109/TPAS.1978.354715","DOIUrl":null,"url":null,"abstract":"A new semiconductive glaze insulator with superior glaze and greatly improved contamination performance has been developed for use in vertical and V-string positions. This insulator makes it possible to convert many existing lines to operation at higher voltages and to design new lines with greatly reduced tower head dimensions.","PeriodicalId":250579,"journal":{"name":"1975 EIC 12th Electrical/Electronics Insulation Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1975 EIC 12th Electrical/Electronics Insulation Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TPAS.1978.354715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A new semiconductive glaze insulator with superior glaze and greatly improved contamination performance has been developed for use in vertical and V-string positions. This insulator makes it possible to convert many existing lines to operation at higher voltages and to design new lines with greatly reduced tower head dimensions.