New methods for determining the vacancy and void content of single crystal silicon

Abstract

Summary form only given. Our present understanding of the point defect concentration and atomic transport in pure silicon will be reviewed, with the emphasis on the loss of equilibrium as the temperature is lowered. Diffusion and trapping of "fast" impurities in silicon will be reviewed. Interstitial in- and out-diffusion at low temperature of impurities that may be trapped at vacancies and internal surfaces provides new opportunities for characterizing lattice defects.