Triple Band Low Noise Amplifier Design for Wireless Applications

H. Tork
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Abstract

In this paper, a triple band low noise amplifier (TB-LNA) is presented based on using of multi-section impedance transformer as matching circuit at its input and a single stub matching technique at its output. The designed amplifier covering (S-band) at 2.4 GHz, (C-band) at 7.5 GHz and (X-band) at 9.5 GHz. Power Added Efficiency is improved with reduction of power dissipation by applying Class-F amplifier configuration. Low Noise (ATF-34143) PHEMT has been employed for this design. RT Duriode 5880 substrate with dielectric constant $\varepsilon \mathrm{r}=2.2$, height $\mathrm{h}=31$ mil and tangent loss $\tan 6=0.0009$ is used. proposed TB-LNA was designed and analyzed over the desired bands by Advanced Design System. The TB-LNA achieves return lossS11 = −24.81dB, −15.3dB, and −25.5 dB, and provides gain of 14.53 dB, 5.39 dB and 3.18 dB with low noise figure of 0.474 dB, 2.541 dB and 7.072 dB, with Maximum (PAE) of 47 %, 21.8%, and 17.2% at frequencies F=2.4GHz,7.5GHz and 9.5GHz, respectively compared with another multi-band low noise amplifiers.
无线应用的三频带低噪声放大器设计
本文提出了一种采用多段阻抗互感器作为输入匹配电路,在输出端采用单根匹配技术的三频段低噪声放大器(TB-LNA)。设计的放大器覆盖2.4 GHz (s频段)、7.5 GHz (c频段)和9.5 GHz (x频段)。通过采用f类放大器配置,降低了功耗,提高了功率增加效率。低噪声(ATF-34143) PHEMT已被用于该设计。RT采用介电常数$\varepsilon \mathrm{r}=2.2$,高度$\mathrm{h}=31$ mil,正切损耗$\tan 6=0.0009$的5880衬底。利用Advanced Design System对所提出的TB-LNA进行了设计和分析。该TB-LNA的回波损耗分别为- 24.81dB、- 15.3dB和- 25.5 dB,增益分别为14.53 dB、5.39 dB和3.18 dB,噪声系数分别为0.474 dB、2.541 dB和7.072 dB,最大(PAE)为47 %, 21.8%, and 17.2% at frequencies F=2.4GHz,7.5GHz and 9.5GHz, respectively compared with another multi-band low noise amplifiers.
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