Analysis of the impact of process variations on static logic circuits versus fan-in

M. Alioto, G. Palumbo, M. Pennisi
{"title":"Analysis of the impact of process variations on static logic circuits versus fan-in","authors":"M. Alioto, G. Palumbo, M. Pennisi","doi":"10.1109/ICECS.2008.4674810","DOIUrl":null,"url":null,"abstract":"In this paper, the effect of process variations on the delay of CMOS static logic circuits is discussed versus fan-in. In particular, the effect of process variations in stacked transistors (which determine the fan-in) is analytically evaluated. From circuit analysis, a simple analytical model is derived that expresses the delay variation as a function of the number of stacked transistors and transistor size. Theoretical results are useful to gain an insight into the dependence of the delay variation on design parameters. Monte Carlo simulations on a 90-nm technology were performed to validate the results.","PeriodicalId":404629,"journal":{"name":"2008 15th IEEE International Conference on Electronics, Circuits and Systems","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 15th IEEE International Conference on Electronics, Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2008.4674810","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

In this paper, the effect of process variations on the delay of CMOS static logic circuits is discussed versus fan-in. In particular, the effect of process variations in stacked transistors (which determine the fan-in) is analytically evaluated. From circuit analysis, a simple analytical model is derived that expresses the delay variation as a function of the number of stacked transistors and transistor size. Theoretical results are useful to gain an insight into the dependence of the delay variation on design parameters. Monte Carlo simulations on a 90-nm technology were performed to validate the results.
工艺变化对静态逻辑电路与扇入的影响分析
本文讨论了工艺变化对CMOS静态逻辑电路延迟的影响。特别是,工艺变化的影响,堆叠晶体管(决定扇入)进行了分析评估。从电路分析中,推导出一个简单的解析模型,该模型将延迟变化表示为堆叠晶体管数量和晶体管尺寸的函数。理论结果有助于深入了解延迟变化对设计参数的依赖关系。在90纳米技术上进行蒙特卡罗模拟以验证结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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