{"title":"Ultra Low Voltage Sub-100 mV Vdd CMOS","authors":"S. Aunet","doi":"10.1109/NEWCAS50681.2021.9462735","DOIUrl":null,"url":null,"abstract":"Logic and memory proven in silicon, operating at sub-100 mV Vdds are discussed. Static CMOS is likely to be augmented with Schmitt-trigger based solutions, especially for memories that should operate at Vdds below 100 mV.","PeriodicalId":373745,"journal":{"name":"2021 19th IEEE International New Circuits and Systems Conference (NEWCAS)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 19th IEEE International New Circuits and Systems Conference (NEWCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEWCAS50681.2021.9462735","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Logic and memory proven in silicon, operating at sub-100 mV Vdds are discussed. Static CMOS is likely to be augmented with Schmitt-trigger based solutions, especially for memories that should operate at Vdds below 100 mV.