CMOS Photodiode Design for Gamma Camera Application

Abstract

We designed new photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Micro System (AMS). The photodiode areas are respectively 1 mm × 1 mm and 0.4 mm × 0.4 mm with fill factor 98% and total chip area is 2 square millimetres. The sensor pixels show a logarithmic response in illumination and are capable of detecting very low blue light (less than 0.5 lux) . These results allow to use our sensor in new gamma camera solid-state concept.