A Design of 5.8GHz Tunable Band Noise Cancelling CMOS LNA for DSRC Communications

Dong Won Lee, Kangyoon Lee
{"title":"A Design of 5.8GHz Tunable Band Noise Cancelling CMOS LNA for DSRC Communications","authors":"Dong Won Lee, Kangyoon Lee","doi":"10.1109/ISOCC50952.2020.9332934","DOIUrl":null,"url":null,"abstract":"This article presents about 5.8GHz noise cancelling CMOS LNA for DSRC communication. The LNA is designed with differential output with balun architecture and resistive-feedback noise cancelling technique. Tunable load capacitor bank achieves wideband input matching and gain selection. The LNA is implemented in 130nm CMOS technology and achieves a simulated gain of 24.2dB and PldB of -13.46dB and noise figure(NF) of 2.74dB at center frequency. The power consumption is 10.51mW at 1.2V power supply. The chip area is 509×559µm2","PeriodicalId":270577,"journal":{"name":"2020 International SoC Design Conference (ISOCC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International SoC Design Conference (ISOCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISOCC50952.2020.9332934","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This article presents about 5.8GHz noise cancelling CMOS LNA for DSRC communication. The LNA is designed with differential output with balun architecture and resistive-feedback noise cancelling technique. Tunable load capacitor bank achieves wideband input matching and gain selection. The LNA is implemented in 130nm CMOS technology and achieves a simulated gain of 24.2dB and PldB of -13.46dB and noise figure(NF) of 2.74dB at center frequency. The power consumption is 10.51mW at 1.2V power supply. The chip area is 509×559µm2
用于DSRC通信的5.8GHz可调谐频段降噪CMOS LNA设计
本文介绍了用于DSRC通信的5.8GHz降噪CMOS LNA。LNA设计为差分输出,采用平衡结构和电阻反馈降噪技术。可调谐负载电容器组实现宽带输入匹配和增益选择。该LNA采用130nm CMOS技术实现,在中心频率处仿真增益24.2dB, PldB为-13.46dB,噪声系数(NF)为2.74dB。1.2V供电时的功耗为10.51mW。芯片面积为509×559µm2
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信