Impact of on-chip inductance when transitioning from Al to Cu based technology

Tom Chen
{"title":"Impact of on-chip inductance when transitioning from Al to Cu based technology","authors":"Tom Chen","doi":"10.1109/ISQED.2001.915223","DOIUrl":null,"url":null,"abstract":"How does on-chip inductance impact timing closure when transitioning from Al to Cu based technology? This paper presents some experimental results based on a Al-based 0.18 /spl mu/m CMOS process and a Cu-based 0.13 /spl mu/m CMOS process. The results show that the impact of on-chip inductance is slightly more on the Cu-based 0.13 /spl mu/m process than on the Al-based 0.18 /spl mu/m process. Furthermore, the results demonstrate that on-chip inductance plays an insignificant role if we assume a perfect power supply network around the interconnect routes.","PeriodicalId":110117,"journal":{"name":"Proceedings of the IEEE 2001. 2nd International Symposium on Quality Electronic Design","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2001. 2nd International Symposium on Quality Electronic Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2001.915223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

How does on-chip inductance impact timing closure when transitioning from Al to Cu based technology? This paper presents some experimental results based on a Al-based 0.18 /spl mu/m CMOS process and a Cu-based 0.13 /spl mu/m CMOS process. The results show that the impact of on-chip inductance is slightly more on the Cu-based 0.13 /spl mu/m process than on the Al-based 0.18 /spl mu/m process. Furthermore, the results demonstrate that on-chip inductance plays an insignificant role if we assume a perfect power supply network around the interconnect routes.
从铝基技术过渡到铜基技术时片上电感的影响
当从铝基技术过渡到铜基技术时,片上电感如何影响时序闭合?本文介绍了基于铝的0.18 /spl μ m CMOS工艺和基于铜的0.13 /spl μ m CMOS工艺的一些实验结果。结果表明,片上电感对cu基0.13 /spl mu/m工艺的影响略大于al基0.18 /spl mu/m工艺的影响。此外,研究结果还表明,如果互连线路周围有一个完善的供电网络,片上电感的作用是微不足道的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信