Impact of sacrificial layer type on thin-film metal residual stress

A. Garg, J. Small, X. Liu, A. Mahapatro, D. Peroulis
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引用次数: 10

Abstract

In this paper we study the impact of two sacrificial layers on the final residual stress of thin gold films. In particular, we comapre a typical photoresist layer (Shipley SC1827) to single-crystalline silicon. We fabricate and measure cantilever beams on both sacrificial layers and study their residual stresses by analyzing the final displacement profile of the released beams. All samples were fabricated at the same time and under identical conditions. The study clearly shows that the induced stress on thin films is dependent on the sacrificial layer. The gold film deposited over the single-crystalline silicon shows nearly zero gradient stress after release. On the other hand, gradient stress dominates the gold film deposited during the same run but over a photoresist layer. Such results are very useful in designing and fabricating a wide variety of low-stress actuators and sensors.
牺牲层类型对薄膜金属残余应力的影响
本文研究了两个牺牲层对金薄膜最终残余应力的影响。特别是,我们比较了典型的光刻胶层(Shipley SC1827)和单晶硅。我们在两个牺牲层上制作和测量悬臂梁,并通过分析释放梁的最终位移曲线来研究其残余应力。所有样品均在同一时间和相同条件下制备。研究清楚地表明,薄膜上的诱导应力取决于牺牲层。沉积在单晶硅上的金膜释放后的梯度应力几乎为零。另一方面,梯度应力主导着同一运行期间沉积的金膜,但在光刻胶层上。这些结果对设计和制造各种各样的低应力致动器和传感器非常有用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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