Evaluation of thin-oxide Z2-FET DRAM cell

Abstract

Advanced 28 nm node FDSOI Z2-FETs with thin top-gate insulator are characterized as capacitor-less DRAM cells. Results demonstrate effective Z2-FET memory behavior for narrow devices (below 1 μm). As compared with thicker gate oxide Z2-FETs, thinning the insulator yields lower performance in terms of retention, variability and stability of the logic states during holding.