Low-Dropout Regulator design with a simple structure for good high frequency PSRR performance based on Bandgap Circuit

Xiaozhi Kang, Xiaoxu Kang, Zijian Zhao, Jingxiu Ding, Yi Hu, Dapeng Xu, Qingqing Sun, D. Zhang
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引用次数: 1

Abstract

This paper describes an op-amp free low-dropout regulator with a high PSRR over a broad frequency range. The design merges the high PSRR bandgap and LDO without op-amp involved and thus greatly reduces the silicon area. As no high impedence node engaged in the circuit, it is easy to achieve a good high frequency PSRR performance by using a locally regulated supply voltage. The op-amp free LDO is then developed by embedding replica technique in the bandgap. The circuit is evaluated with HHGrace 0.35µm CMOS technology. It generates a reference voltage of 1.152V and has a temperature coefficient of 0.01mV/K at 27C. LDO has a PSRR of −96dB at DC and still −48.5dB at 1MHz.
基于带隙电路设计结构简单的低差稳压器,具有良好的高频PSRR性能
本文介绍了一种在宽频率范围内具有高PSRR的无运放低差稳压器。该设计融合了高PSRR带隙和LDO,而不涉及运放,从而大大减少了硅面积。由于电路中没有高阻抗节点,使用局部稳压电源电压很容易获得良好的高频PSRR性能。然后通过在带隙中嵌入复制技术开发了无运放LDO。采用HHGrace 0.35µm CMOS技术对电路进行了评估。它产生的参考电压为1.152V,在27℃时温度系数为0.01mV/K。LDO在直流时的PSRR为- 96dB,在1MHz时仍为- 48.5dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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