Epitaxial growth of ferroelectric Pb(Zr/sub 0.9/Ti/sub 0.1/)O/sub 3/ films by reactive sputtering of multi metal target

Abstract

Ferroelectric epitaxial Pb(Zr/sub 0.9/Ti/sub 0.1/)O/sub 3/ thin films have been successfully obtained on platinum-coated sapphire substrates by reactive sputtering of the multimetal target. The films with a perovskite structure have been epitaxially grown at substrate temperatures of 600-620 degrees C. The crystallinity of the Pb(Zr/sub 0.9/Ti/sub 0.1/)O/sub 3/ film depended on the substrate temperature and the crystallinity of the platinum film used as a bottom electrode. The remanent polarization and the coercive field of a 0.75- mu m-thick film were measured as 13.9 mu C/cm/sup 2/ and 60.0 kV/cm, respectively.<>