Gain spectroscopy in lnGaN/GaN quantum well diodes

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics Pub Date : 1997-05-18 DOI:10.1109/CLEO.1997.603234

M. Kuball, E. Jeon, Y. Song, A. Nurmikko, P. Kozody, A. Abare, S. Keller, L. Coldren, U. Mishra, S. Denbaars, D. Steigerwald

引用次数: 0

Abstract

Given the recent demonstration of a blue InGaN QW diode laser,1 one key question concerns the physical nature of optical gain in this system, given the rather high threshold current density required for lasing and the recognized presence of a complex crystalline microstructure in the material.

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lnGaN/GaN量子阱二极管的增益光谱

鉴于最近蓝色InGaN QW二极管激光器的演示，一个关键问题涉及该系统中光学增益的物理性质，考虑到激光所需的相当高的阈值电流密度和材料中已知的复杂晶体微观结构的存在。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics

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