Area-effective programmable FSM-based MBIST for synchronous SRAM

Nurqamarina Binti Mohd Noor, A. Saparon, Yusrina Yusof, Mahmud Adnan
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引用次数: 4

Abstract

As the memory enters submicron technology, new test algorithms that are able to give a better fault coverage such as to detect single-cell fault and all intra-word coupling fault (CF) have been widely developed. In order to implement this algorithm to the memory, test techniques such as BIST are utilized. Common types of programmable memory built-in-self tests (PMBIST) are microcode-based PMBIST and FSM-based PMBIST. The popular approaches of designing various kinds of PMBIST architectures are either by targeting to reach specific testing requirement such as full speed and at speed or by considering the cost-constraint and area overhead for low-cost or low-area design. In this paper, FSM-based BIST is designed to enable detecting both single-cell dynamic fault such as read destructive fault (RDF), deceptive read destructive fault (DRDF), and all intra-word coupling faults (CF) in a synchronous SRAM under low-area constraint of test requirement.
基于区域有效可编程fsm的同步SRAM MBIST
随着存储器进入亚微米技术,新的测试算法得到了广泛的发展,以提供更好的故障覆盖率,如检测单细胞故障和所有字内耦合故障(CF)。为了在内存中实现该算法,使用了测试技术,如BIST。常见的可编程内存内置自我测试(PMBIST)类型是基于微码的PMBIST和基于fsm的PMBIST。设计各种PMBIST体系结构的流行方法要么以达到特定的测试要求为目标,如全速和高速,要么考虑成本约束和低成本或低面积设计的面积开销。本文设计了基于fsm的BIST,在测试需求的低面积约束下,能够检测同步SRAM中的单cell动态故障,如读破坏故障(RDF)、欺骗性读破坏故障(DRDF)和所有字内耦合故障(CF)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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