Reliability analysis of ESD for novel image sensor with CMOS readout circuit

Abstract

According to the characterization of a new image sensor with quantum dots-quantum well (QDs-QW) hybrid hetero-structure, several electrostatic discharge (ESD) protection approaches for readout integrated circuits (ROIC) applied to novel image sensor with state-of-the-art CMOS technology were carefully designed. The results were presented and analyzed in this paper.