L. Jastrzebski, R. Duru, D. Le-Cunff, M. Cannac, S. Joblot, I. Mica, M. Polignano, A. Galbiati, P. Monge, Roffarello, G. Nadudvari, Z. Kiss, I. Lajtos, A. Pongrácz, G. Molnár, M. Nagy, L. Dudás, P. Basa, B. Greenwood, J. Gambino
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引用次数: 2
Abstract
As Si is an indirect band gap material, the PL generated by phonon assisted band-to-band (B2B) radiative recombination (of energy equal to energy gap of Si) is very weak; about 10 orders of magnitude lower than the exciting photon flux [1] . If crystallographic defects are present then at room temperature an additional broad defect PL peak is generated (DPL) with energy smaller than the band gap of Si [1] , [2] , [3] . At room temperature, defect-band PL intensity is orders of magnitude lower than the B2B intensity [1] .
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