A single photon avalanche detector in a 180 nm standard CMOS technology

Abstract

We present the performance characteristics of a Single Photon Avalanche Detector fabricated in a 180 nm standard CMOS image sensor technology. The SPAD implemented in 8 different diameters between 5 μm and 40 μm shows a DCR below 10 kHz at 15°C with a low afterpulsing probability (0.2% at 300 mV), a good photodetection efficiency (20%) and a very good time resolution (80 ps at 450 nm).