Development of high-quality low-temperature (≤ 120°C) PECVD-SiN films by organosilane

Abstract

We obtained high-quality PECVD-SiN films deposited under 120°C using organosilane precursor. The SiN film has low hydrogen content and low BHF etching rate. In addition, SiN film properties did not change after pressure cooker test (PCT: 120°C, 0.2 MPa, 6 hours). The low-temperature deposition process for SiN films hold promise for improving 3DIC manufacturing process.