{"title":"Epitaxially encapsulated resonant accelerometer with an on-chip micro-oven","authors":"D. D. Shin, Yunhan Chen, I. Flader, T. Kenny","doi":"10.1109/TRANSDUCERS.2017.7994119","DOIUrl":null,"url":null,"abstract":"This paper reports, for the first time, on-chip ovenization of an epitaxially encapsulated resonant accelerometer to improve the stability of scale factor and bias. A double-ended tuning fork (DETF) resonator that shares the anchor with the sensing resonators is used to measure the device temperature. The measured temperature is maintained at a fixed set point using an on-chip silicon heater defined in the encapsulation layer. Preliminary results show significant improvement beyond the device's intrinsic passive temperature compensation. Over the temperature range from −20°C to 80°C, the 0g bias error is reduced by a factor of three, and the scale factor stability is improved by over an order of magnitude.","PeriodicalId":174774,"journal":{"name":"2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2017-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TRANSDUCERS.2017.7994119","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
This paper reports, for the first time, on-chip ovenization of an epitaxially encapsulated resonant accelerometer to improve the stability of scale factor and bias. A double-ended tuning fork (DETF) resonator that shares the anchor with the sensing resonators is used to measure the device temperature. The measured temperature is maintained at a fixed set point using an on-chip silicon heater defined in the encapsulation layer. Preliminary results show significant improvement beyond the device's intrinsic passive temperature compensation. Over the temperature range from −20°C to 80°C, the 0g bias error is reduced by a factor of three, and the scale factor stability is improved by over an order of magnitude.