Packaging characteristics of 6-layer ultra low-k/Cu dual damascene interconnect featuring advanced scalable porous silica (k=2.1)

S. Chikaki, E. Soda, A. Gawase, T. Suzuki, Y. Kawashima, N. Oda, S. Saito
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引用次数: 2

Abstract

To enhance the process damage tolerance, a 2nd generation scalable porous silica (k=2.1) has been developed by reducing pore-size to 2/3. Using this new low-k film, hybrid dual-damascene interconnects were successfully fabricated with low thermal stress and high adhesion strength. Packaging performance of the six-layered multilevel interconnects was also evaluated with wire-bonding and temperature-cycle tests.
采用先进可扩展多孔二氧化硅(k=2.1)的6层超低k/Cu双大马士革互连的封装特性
为了提高工艺损伤容忍度,第二代可扩展多孔二氧化硅(k=2.1)通过将孔隙尺寸减小到2/3而被开发出来。利用这种新型低k薄膜,成功制备了具有低热应力和高粘接强度的杂化双大马士革互连。通过线接和温度循环测试对六层多层互连的封装性能进行了评估。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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