P. Dianat, R. Prusak, F. Quaranta, A. Cola, B. Nabet
{"title":"A Planar Switchable Capacitor with Embedded Two-Dimensional Electron System for Higher Integrations in VLSI and RFIC","authors":"P. Dianat, R. Prusak, F. Quaranta, A. Cola, B. Nabet","doi":"10.1109/CSICS.2012.6340074","DOIUrl":null,"url":null,"abstract":"A metal-semiconductor-metal capacitor with embedded two-dimensional charge is designed and fabricated. Capacitance-Voltage characteristics exhibit switchability with a large voltage sensitivity. Maximum and minimum capacitances outperform previous predictions with potential applicability in RFICs and VLSI for reducing the cross-talk among transmission lines and achievement of higher integrations. The device can replace bulky conductors with its negative capacitance feature. The large light sensitivity in the C-V makes this capacitor an ideal candidate for monolithic microwave-photonic integrated circuits.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"365 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2012.6340074","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A metal-semiconductor-metal capacitor with embedded two-dimensional charge is designed and fabricated. Capacitance-Voltage characteristics exhibit switchability with a large voltage sensitivity. Maximum and minimum capacitances outperform previous predictions with potential applicability in RFICs and VLSI for reducing the cross-talk among transmission lines and achievement of higher integrations. The device can replace bulky conductors with its negative capacitance feature. The large light sensitivity in the C-V makes this capacitor an ideal candidate for monolithic microwave-photonic integrated circuits.