Ga0.47In0.53As/InP Photoconductive Detector with High Receiver Sensitivities

Abstract

We report a high-sensitivity Ga0.47In0.53As photoconductive detector (PCD) prepared by trichloride vapor phase epitaxy. This detector shows a receiver sensitivity better than that of a Ga0.47In0.53As pin photodiode at 1Gb/s. This study indicates that photoconductive detectors are promising candidates for applications in high data rate, long wavelength lightwave communications.