Evaluation of TCNQ LB films on aluminum thin films by ATR measurement

Abstract

The attenuated total reflection (ATR) properties were measured for C/sub 15/TCNQ Langmuir-Blodgett (LB) ultrathin films on Al thin films deposited using two types of processes. The dielectric constants were theoretically calculated from the ATR curves. It was estimated that Z-type LB films were well deposited in the first process. On the contrary, in the second process, it was estimated that the LB films were not perfectly deposited as Y-type, but partially as Z-type.