Characterization And Simulation Of Silicon Power Devices Up To Very High Temperatures

Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Pub Date : 2006-06-22 DOI:10.1109/MIXDES.2006.1706655

P. Borthen, G. Wachutka

引用次数: 1

Abstract

We investigated and calibrated physically-based high-temperature device models on the basis of measurements and simulations of industrial power MOSFETs and non-punch through (NPT) 600V IGBTs (both from Infineon AG) in a temperature range from room temperature up to 750 K

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极高温度下硅功率器件的特性与仿真

我们在测量和模拟工业功率mosfet和non-punch through (NPT) 600V igbt(均来自英飞凌AG)的基础上，研究并校准了基于物理的高温器件模型，温度范围从室温到750 K

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.

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