Approach of various polymers to 157 nm single-layer resists

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI:10.1109/IMNC.2000.872644

S. Kishimura, M. Sasago, M. Shirai, M. Tsunooka

引用次数: 0

Abstract

Vacuum ultraviolet (VUV) lithography using the F/sub 2/ excimer laser (157 nm) has been proposed as the most promising candidates for 100-70 nm rule device. We have investigated the transparency and photochemical reaction of well-known polymers and resists in VUV region. In this study, we report the F/sub 2/ excimer laser exposure characteristics of resists consisting of various polymers for KrF and ArF resists.

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各种聚合物制备157纳米单层电阻的方法

采用F/sub /准分子激光(157 nm)的真空紫外光刻技术被认为是最有前途的100-70 nm规则器件。我们研究了知名聚合物和抗蚀剂在紫外区的透明度和光化学反应。在本研究中，我们报道了由不同聚合物组成的KrF和ArF抗蚀剂的F/sub /准分子激光曝光特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

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