SOI high voltage integrated circuit technology for plasma display panel drivers

M.R. Lee, O. Kwon, S. Lee, I. Lee, I. Yang, J. H. Paek, L. Hwang, J. I. Ju, B. Lee, Chang-jae Lee
{"title":"SOI high voltage integrated circuit technology for plasma display panel drivers","authors":"M.R. Lee, O. Kwon, S. Lee, I. Lee, I. Yang, J. H. Paek, L. Hwang, J. I. Ju, B. Lee, Chang-jae Lee","doi":"10.1109/ISPSD.1999.764118","DOIUrl":null,"url":null,"abstract":"We have developed 150 V and 250 V high voltage integrated circuit technologies using high performance extended drain MOSFET (EDMOSFET) and dielectric isolation (DI) technology for data and scan driving LSIs of color AC plasma display panel systems for an application of HDTV. The EDMOSFETs have invariant channel length despite process variation because of a self-aligned structure. This results in smaller chip area for the developed driver LSIs than that of conventional driver LSIs using LDMOSFETs. The data driver LSI with maximum driving current of 50 mA and 60 output channels can be applied to PDP systems with a fast addressing time of 0.7 /spl mu/s. The scan driver LSI for large-size AC PDPs has a maximum driving current of 500 mA for both the source and the sink.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1999.764118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15

Abstract

We have developed 150 V and 250 V high voltage integrated circuit technologies using high performance extended drain MOSFET (EDMOSFET) and dielectric isolation (DI) technology for data and scan driving LSIs of color AC plasma display panel systems for an application of HDTV. The EDMOSFETs have invariant channel length despite process variation because of a self-aligned structure. This results in smaller chip area for the developed driver LSIs than that of conventional driver LSIs using LDMOSFETs. The data driver LSI with maximum driving current of 50 mA and 60 output channels can be applied to PDP systems with a fast addressing time of 0.7 /spl mu/s. The scan driver LSI for large-size AC PDPs has a maximum driving current of 500 mA for both the source and the sink.
等离子显示面板驱动的SOI高压集成电路技术
我们开发了150 V和250 V高压集成电路技术,采用高性能扩展漏极MOSFET (EDMOSFET)和介质隔离(DI)技术,用于高清电视应用的彩色交流等离子体显示面板系统的数据和扫描驱动lsi。由于自对准结构,尽管工艺变化,但edmosfet具有不变的通道长度。这使得开发的驱动lsi的芯片面积比使用ldmosfet的传统驱动lsi的芯片面积更小。该数据驱动LSI的最大驱动电流为50 mA,输出通道为60个,可应用于寻址速度为0.7 /spl mu/s的PDP系统。用于大尺寸交流pdp的扫描驱动LSI源源和汇源的最大驱动电流均为500ma。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信