Gate controlled diode characteristics of super steep subthreshold slope PN-body tied SOI-FET for high efficiency RF energy harvesting

Abstract

Gate controlled diode (GCD) characteristics with our newly proposed super steep subthreshold slope (SS) “PN-Body Tied SOI-FET” was shown, for the first time, compared with the conventional diodes. It shows the super steep characteristics, the low leakage current and the sharp On-characteristics even on the ultralow voltage range of 50mV. The simple circuit simulations also indicated that the GCD with “PN-Body Tied SOI-FET” will achieve the high efficiency rectification on the ultralow input power of the RF energy harvesting. Additionally, the slight shift of the voltage of the zero current was confirmed as a specific characteristics on this GCD.