Characterisation of bulk GaSb using TCAD

Abstract

The III–V compounds have turned out to be promising candidates for high speed electronics and photonic devices. Among III–V compounds, gallium antimonide (GaSb) is particularly interesting as a substrate material because its lattice parameter matches solid solutions of various ternary and quaternary III–V compounds whose band gaps cover a wide spectral range. These have stimulated a lot of interest in GaSb for basic research in materials as well as device fabrication. In this paper, investigation is done for the hole transport property of bulk GaSb with intrinsic concentration 1.5×1015 cm−3. Hole concentration and mobility of bulk GaSb were investigated by simulation method using the device simulation software ATLAS (SILVACO) in the temperature range from 77K to 320K in an interval of 5Kand 10K. It also shows that the effective hole mobility is about 461 cm2/Vs with the concentration ≈ 1.5 × 1015 cm−3 at room temperature i.e. 300K. It has been found that the effective mobility is affected by ionized impurity scattering; in contrast at higher temperatures (≈ 300K) acoustic, polar optical and non-polar optical scattering processes dominate the mobility. The agreement of simulated data with that of reported experimental data is found to be satisfactory.